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SINGULAR – A Novel Static Inline PECVD-Deposition Concept for Silicon-Cell Production
B.F.P. Roos, O. Hohn, T. Dippell, B. Cord, M.R. Huber, P. Bink
24thEUPVSEC2009

Formation of High Quality AlN Tunnel Barriers via an Inductively Couple Plasma
Thomas W. Cecil1*, Arthur W. Lichtenberger1, and Anthony R. Kerr2
19th International Symposium on Space Terahertz Technology, Groningen, 28-30 April 2008

1Univeristy of Virginia, Charlottesville, VA 22901, USA 2National Radio Astronomy Observatory, Charlottesville, VA 2290X, USA

Epitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source
Appl. Phys. Lett. 91, 233102 (2007)
T. Zijlstra, C. F. J. Lodewijk, N. Vercruyssen, F. D. Tichelaar, D. N. Loudkov, and T. M. Klapwijk,
Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft, University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands

Preparation and properties of highly tetrahedral hydrogenated amorphous carbon
M. Weiler, S.Sattel, K. Jung, H. Ehrhardt, V.S. Veerasamy and J. Robertson
Phys.Rev.B, 53 (1996) 1594

Deposition of tetrahedral hydrogenated amorphous carbon using a novel electron cyclotron wave resonance reactor
M.Weiler, K. Lang, E. Li und J. Robertson
Appl. Phys. Lett. 71 (25) 1997